v rrm = 800 v - 1600 v i f(av) = 150 a features ? high surge capability ? types from 800 v to 1600 v v rrm three phase package parameter symbol unit repetitive peak reverse voltage v v MDS150-08 thru mds150-16 maximum ratings, at t j = 25 c, unless otherwise specified conditions ? not esd sensitive mds150-16 three phase silicon brid g e rectifier 1200 1600 MDS150-08 800 mds150-12 repetitive peak reverse voltage v rrm v reverse unrepeated voltage v rsm v operating temperature t j c storage temperature t stg c electrical characteristics, at tj = 25 c, unless otherwise spe cified parameter symbol unit a verage forward current i f(av) a peak forward surge current i fsm a maximum forward voltage (per leg) a a thermal characteristics maximum thermal resistance, j unction - case (p er le g) r jc c/w maximum repeated reverse current at rated dc blocking voltage (per leg) t a = 125 c 620 i r 0.18 0.18 3-phase, ful-wave, t c = 90 c 150 1 pulse, 50/60 hz, unrepeated 1500 t a = 25 c v 10 0.18 1.45 10 10 620 620 i fm = 150 a, t j = 25 c conditions v f single phase, half sine wave, 50 hz, resistive or inductive loa d. 1.45 1.45 -40 to 150 -40 to 125 MDS150-08 -40 to 150 -40 to 150 -40 to 125 -40 to 125 mds150-12 mds150-16 150 150 1500 1500 1200 1600 1320 1760 800 960 for capacitive load derate current by 20%. mar 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/bridge-rectifiers/ 1
MDS150-08 thru mds150-16 mar 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/bridge-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MDS150-08 thru mds150-16 mar 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/bridge-rectifiers/ 3
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